Plasma ETCH
Provide Inductively Coupled Plasma Etch Technology
Plasma ETCH
Etching is the process of selectively removing mask patterned materials from the wafer’s surface to create desired patterns on the wafer’s surface. Plasma etch is the use of a radio frequency (RF) excited plasma to produce chemically reactive species from various gases. The reactive plasma is exposed to the wafer surface and etches away the material not protected by a masking layer.
Products
Family Plasma Dry Etch Systems
Based on Inductively Coupled Plasma (ICP) with grounded Faraday Shield source designs, The Company’s plasma etch systems have unique capabilities to independently control ion energy and ion density.
The Company’s etch products have excellent etch selectivity and low plasma damage, superior device performance for on-wafer devices, suitable for film etching in semiconductor front-end and back-end manufacturing.
The Company’s etch products have benefits in high etch rate, low plasma damage, superior device performance and much low cost of consumables (CoC). The systems are the ICP etchers in mass production.
